Journals
2026 EN
Sarangi Pankaj Lochan · Panda Subham Sekhar · Sahu Ankush Amrit
+4 more
ABSTRACT Extensive research is being carried out on the development of biodegradable packaging films. Antimicrobial activity is one among the critical factors in food packaging. In the present work, Cu‐TiO 2 nanocomposite has been synthesized by the reduction of copper ions using L‐ascorbic acid in the presence of TiO 2 nanoparticles. Formation of copper nanoparticles has been confirmed by x‐ray diffraction, and morphology has been observed by scanning electron microscopy. Nanocomposite has been compounded with poly lactic acid (PLA) and thermoplastic starch (TPS) using a twin‐screw extruder, followed by the blowing of films. The prepared film has tensile strength and elongation of 31.11 ± 0.93 MPa and 2.83% ± 0.12%, respectively. The obtained values are similar to PLA/TPS film with TiO 2 . Cu‐TiO 2 nanocomposite film has ~80%–85% transparency in the visible region. Antimicrobial activity against E. coli and S. aureus has been observed for the Cu‐TiO 2 nanocomposite film, with about an order of magnitude lower colony‐forming unit as compared to the film with TiO 2 . Weight loss of 4.4% has been observed for the film buried in composting medium for 30 days.
Journals
2026 EN
Yadav Shivangi · Lohia Pooja · Sahu Anupam
ABSTRACT This study presents a lead‐free dual‐absorber perovskite solar cell (PSC) integrating double perovskite material (FA) 2 BiCuI 6 for enhanced sensitivity and single perovskite material MASnI 3 for broad spectrum absorption resulting in enhance power conversion efficiency (PCE) of 28.31%, working at temperature 320 K while mitigating lead toxicity. The proposed device architecture is FTO/WS 2 /(FA) 2 BiCuI 6 /MASnI 3 /CuI/Ni. The (FA) 2 BiCuI 6 layer effectively absorbs visible light, whereas MASnI 3 extends absorption into the near‐infrared region (NIR). This performance surpasses many current systems and competes with the efficiency of complex tandem cells, without their associated drawbacks. The use of oxygen‐free materials, WS 2 and CuI, in the electron and hole transport layers prevents tin oxidation, boosting both stability and efficiency via facilitating efficient carrier extraction and reducing recombination losses. The device exhibits a short‐circuit current density (J SC ) of 33.43 mA/cm 2 , an open‐circuit voltage (V OC ) of 1.01 V, and a fill factor (FF) of 83.45% at series resistance 1.2 Ω . cm 2 and shunt resistance 10 5 Ω . cm 2 . Quantum efficiency measurements indicate 94% efficiency in the visible spectrum, with NIR efficiency decreasing from 92% to 38%. Comprehensive analysis of defect density, absorber thickness, interfacial properties, and recombination dynamics underscores the critical factors influencing device performance. This architecture not only boosts environmental resilience but also advances the development of high‐performance, sustainable solar technology.
Journals
2026 EN
Roy Jyotirmoy · Sahu Savita · Pajjuru Ravi Teja
+3 more
Magnetization dynamics across polyvinylidene fluoride (PVDF) thin films in PVDF/CoFeNi bilayers have been systematically investigated using coplanar waveguide ferromagnetic resonance spectroscopy in broadband frequency range from 9 to 37 GHz. The influence of crystalline (mixture of nonpolar α and polar β phases) and amorphous (nonpolar) PVDF interfaces upon the magnetization dynamics is probed by calculating the Gilbert damping ( α G ) and spin‐mixing conductance ( g ↑↓ ) parameters by varying the thickness of PVDF. A higher α G and its methodical rise with the increase in thickness of crystalline PVDF thin films is noted in comparison with the nonpolar amorphous PVDF interfaces. This work suggests the feasibility of controlling the magnetization dynamics using the crystalline or polar interfaces, possibly by interfacial magnetoelectric coupling at the ferroelectric/ferromagnetic interfaces.
Journals
2026 EN
M Sathishkumar · Abraham Asha Ann · Sahu Rajesh Kumar
+3 more
Topological insulators are a new class of insulators with conducting surface state. Most of the topological insulators are chalcogenides, where a tiny amount of chalcogen vacancy destroys the predicted bulk insulating state and results in a metallic or semi‐metallic bulk electrical transport. BaBiO 3 (BBO) is an insulator that becomes superconducting upon hole doping. Interestingly, under electron doping, it is theoretically predicted to show a topological insulating state with a large bandgap of about 0.7 eV. We have explored electron doping through the chemical substitution of fluorine atoms at the oxygen site. The single crystals of BBO and fluorine‐doped BBO were synthesized via a one‐step solid‐state technique. The single crystals of pure BBO and 10% F‐doped BBO (BaBiO 2.7 F 0.3 ) are chemically single‐phase samples and crystallize in monoclinic I 2 /m crystal structure. The core level and valence band X‐ray photoelectron spectra confirm electron doping in the 10% fluorine‐doped BBO. 20% F‐doped BBO appears to be a multiphase sample, confirmed by back‐scattered electron (BSE) imaging and X‐ray diffraction. This article reports on the successful growth of pure and F‐doped BBO using a one‐step solid‐state technique and discusses the effect of F‐doping on structural and electronic properties.
Journals
2026 EN
Das Chayan · Saikia Dibyajyoti · Sahu Satyajit
Two‐dimensional (2D) materials have gained considerable interest in thermoelectric (TE) applications owing to their high electrical conductivity and weak phonon transport ability. After the successful synthesis of 2D MoSi 2 N 4 , a new class of 2D materials with various exotic properties have gained research interest in different advanced applications, and some of them are expected to be potential TE materials. In this regard, we have investigated the structural, stability, electronic, and thermoelectric properties of 2D ZrX 2 N 4 ( X = Si, Ge) monolayer based on density functional theory (DFT). Both monolayers were found to be dynamically stable, as obtained from phonon band structures. Electronic structure results demonstrated an indirect band gap nature for both ZrSi 2 N 4 and ZrGe 2 N 4 . A thermoelectric figure of merit ( Z T $Z T$ ) of 0.90 and 0.83 was achieved at 900 K for p‐type and n‐type ZrGe 2 N 4 , respectively. Furthermore, aZ T $Z T$ value of 0.7 was obtained for p‐type ZrGe 2 N 4 at 300 K. Similarly,Z T $Z T$ value of 0.89 and 0.82 was achieved for p‐type and n‐type ZrSi 2 N 4 at 900 K, respectively. Our results suggest that ZrGe 2 N 4 could be a potential candidate for low‐temperature thermoelectric applications.
Journals
2026 EN
Sahu Rahul Kumar · Subohi Oroosa
Herein, enhanced dielectric and ferroelectric behavior of double perovskite Bi 2 FeNiO 6 (BFNO) embedded in polyvinylidene fluoride (PVDF) matrix using the solution‐casting method is reported. The presence of A 1 g , E g , and F 2 g modes in the Raman spectra of the BFNO‐PVDF flexible film has confirmed the retention of the Fm‐3m space group of BFNO even after the composite formation. Its microstructural studies with energy dispersive spectroscopy have revealed the uniform dispersion of BFNO nanoparticles within the PVDF network. The room temperature dielectric constant and loss tangent are found to be 652 and 2.5, respectively, at 1 kHz. The frequency and field‐dependent ferroelectric measurements demonstrate a significant increment in P r and E c values as compared to those of the pristine BFNO. This enhanced ferroelectric behavior in the BFNO‐PVDF composite is attributed to the insulating nature of PVDF, which effectively suppresses leakage current and facilitates efficient domain switching by electrically isolating the BFNO grains. Magnetic characterization reveals soft ferromagnetic behavior with M s = 4.49 emu g −1 and H c = 0.19 kOe. Electron spin resonance analysis yields Lande g ‐factor of 2.4, suggesting strong spin‐orbit coupling and local structural distortion. The coexistence of ferroelectric and magnetic ordering in the BFNO‐PVDF composite highlights its potential for multifunctional applications in flexible magnetoelectric and spintronic devices.
Journals
2026 EN
Sahu Satabdi · Singh Ravi Prakash · Rawat Rajeev
+2 more
Herein, a systematic study is reported on the synthesis and characterization of single‐phase rhenium nitride (ReN) thin films grown using a reactive dc magnetron sputtering (R‐dcMS). ReN thin films are expected to be superhard (bulk modulus ≈ 400 GPa) and superconducting ( T c ≈ 5 K). Since the formation enthalpy of ReN ≈ –0.14 eV is comparatively high, a stringent control of growth parameters such as partial N 2 gas flow (R N 2$R_{\text{N}_{2 and growth temperature ( T s ) is necessary to achieve an impurity free and single‐phase ReN. TheR N 2$R_{\text{N}_{2}}$ and the T s are systematically varied during the R‐dcMS process to find the optimal conditions for growth of ReN phase. Resulting samples are studied using X‐ray reflectivity to determine the deposition rate, density, and roughness. The crystal structure and depth profile of ReN thin films have been probed using X‐ray diffraction and secondary ion mass spectroscopy. The electronic structure is studied using hard X‐ray photoelectron spectroscopy and N K‐edge X‐ray absorption near edge structure. The superconducting transition temperature ( T c ) is found to be 3.3 K from the zero field electrical resistivity measurement. The present work constructs aT s − R N 2$T_{\text{s}} - R_{\text{N}_{2}}$ phase diagram to identify the optimal conditions for forming single‐phase ReN films.
Journals
2026 EN
Sahu Shivani · Gupta Pooja · Rajput Parasmani
+2 more
This work presents a systematic and detailed investigation of the structural, electronic, and electrochemical properties of Ni–N thin films grown using a reactive magnetron sputtering at partial nitrogen flow (RN 2 ) of 0, 15, 50, 75, and 100%. Below RN 2 = 50%, the phase formed is metallic Ni with some N atoms occupying interstitial sites. However, when the RN 2 exceeds 50%, the Ni 3 N phase sets in, and a fully stoichiometric Ni 3 N phase is realized at RN 2 = 100%. As RN 2 increases, the oxidation state of Ni increases and the structural ordering improves, as substantiated by X‐ray absorption fine structure and X‐ray diffraction analysis. Additionally, hard X‐ray photoelectron spectroscopy measurements confirm the formation of a fully stoichiometric Ni 3 N phase at RN 2 = 100%. Finally, the electrocatalytic performance measured through the oxygen evolution reaction clearly demonstrates better performance of Ni 3 N as compared to pure Ni or other Ni–N phases. This work provides essential building blocks to establish Ni 3 N as an environmentally friendly, noble metal‐free, and earth‐abundant catalyst for water splitting reactions.
Journals
2026 EN
Kumar Kishan · Kumar Ashok · Kumar Suresh
+6 more
High‐performance photodetectors (PDs) require compact design, low power consumption, and broadband operation. Single‐layer WS 2 , though a promising 2D semiconductor, faces limitations in practical photodetection due to its atomic thickness and narrow spectral absorption. Here, we demonstrate a p–n heterostructure photodetector based on p‐type CuGaO 2 (CGO) functionalized n‐type WS 2 , which significantly enhances UV detection capability. The synergistic effects of broadened optical absorption, interfacial charge transfer, and the built‐in electric field at the CGO/WS 2 junction enable efficient photocarrier generation and separation. Under 15 μW/cm 2 UV illumination and 5 V bias, the device achieves a responsivity of 3.5 A/W, detectivity of 5.86 × 10 11 Jones, and external quantum efficiency of 1.2 × 10 3 %, with noise equivalent power as low as 0.28 pW/(Hz) 1/2 . Furthermore, the heterostructure exhibits fast response times (rise/fall time 243/262 μs), demonstrating its potential for high‐sensitivity, low‐light UV photodetection applications. These results demonstrate a straightforward yet effective approach to addressing the inherent limitations of 2D transition metal dichalcogenide photodetectors, providing a promising pathway for the development of broadband, UV‐responsive, and energy‐efficient photodetection technologies suitable for next‐generation optoelectronic applications.
Journals
2026 EN
Setia Prince · Tripathi Nikhil · Gupta Aman
+6 more
This research aims to understand the influence of silicon content (1.79 and 6.06 wt% Si) on the microscale deformation behavior of stainless steels for potential cryogenic applications, by means of in situ tensile testing within a scanning electron microscope. The investigation focuses on how silicon‐induced solid solution strengthening and ferrite phase stabilization affect mechanical response through strain partitioning between γ‐austenite and δ‐ferrite phases. As the silicon content increases, the microstructure transforms from a single‐phase γ to a dual‐phase microstructure comprising both γ and δ. Quantitative analysis of local misorientation, image quality, and deformed volume fraction reveals that the δ‐phase in the high‐silicon alloy exhibits delayed slip line formation and higher resistance to plastic deformation. This is further supported by nanohardness measurements, where the γ and δ phases in the high‐silicon alloy show significantly higher values (6.06% Si, γ ≈ 3.4 GPa; δ ≈ 4.96 GPa) compared to the γ‐phase in the low‐silicon alloy (1.79% Si, γ ≈ 2.7 GPa). Orientation mapping and misorientation profiles indicate that deformation occurs through heterogeneous mechanisms, including both slip and twinning, providing critical insights into the strain partitioning behavior and texture evolution in stainless steels.