The only comparative study of the inclusive pion single-spin asymmetriesproduced in the interactions of the polarized protons and antiprotons incollisions with unpolarized proton was carried out at E-704 experiment.Significant asymmetries were found at large $x_{F}$ and middle $p_{T}$,$\pi^{+}$ and $\pi^{0}$ asymmetries have positive signs while $\pi^{-}$ hasnegative one in the $p^{\uparrow}+p$ collisions, while in the$\bar{p}^{\uparrow}+p$ interactions the $\pi^{-}$ and $\pi^{0}$ asymmetrieshave positive signs while $\pi^{+}$ has negative sign. Similar experimentalstudy can be done in the SPASCHARM experiment at U-70 accelerator at IHEP forvarious secondary particles with the use of 16 GeV polarized proton andantiproton beams.
This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.410-6 Ωcm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.