The recent demonstration of optically active telecom emitters makes silicon acompelling candidate for solid state quantum photonic platforms. Particularlyfabrication of the G center has been demonstrated in carbon-rich silicon uponconventional thermal annealing. However, the high-yield controlled fabricationof these emitters at the wafer-scale still requires the identification of asuitable thermodynamic pathway enabling its activation following ionimplantation. Here we demonstrate the efficient activation of G centers inhigh-purity silicon substrates upon ns pulsed laser annealing. The proposedmethod enables the non-invasive, localized activation of G centers by thesupply of short non-stationary pulses, thus overcoming the limitations ofconventional rapid thermal annealing related to the structural metastability ofthe emitters. A finite-element analysis highlights the strong non-stationarityof the technique, offering radically different defect-engineering capabilitieswith respect to conventional longer thermal treatments, paving the way to thedirect and controlled fabrication of emitters embedded in integrated photoniccircuits and waveguides.